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igbt highspeed5fastigbtintrenchstop tm 5technologycopackedwithrapid1 fastandsoftantiparalleldiode ikp08n65f5 650vduopackigbtanddiode highspeedswitchingseriesfifthgeneration datasheet industrialpowercontrol
2 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 highspeed5fastigbtintrenchstop tm 5technologycopackedwith rapid1fastandsoftantiparalleldiode featuresandbenefits: highspeedf5technologyoffering ?best-in-classefficiencyinhardswitchingandresonant topologies ?650vbreakdownvoltage ?lowq g ?igbtcopackedwithrapid1fastandsoftantiparalleldiode ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?solarconverters ?uninterruptiblepowersupplies ?weldingconverters ?midtohighrangeswitchingfrequencyconverters keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package ikp08n65f5 650v 8a 1.6v 175c k08f655 PG-TO220-3 g c e g c e c
3 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 g c e g c e c
4 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 maximumratings parameter symbol value unit collector-emitter voltage v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 18.0 11.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 24.0 a turnoffsafeoperatingarea v ce 650v, t vj 175c - 24.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 20.0 12.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 24.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 70.0 31.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 2.20 k/w diode thermal resistance, junction - case r th(j-c) 2.90 k/w thermal resistance junction - ambient r th(j-a) 62 k/w g c e g c e c
5 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =8.0a t vj =25c t vj =125c t vj =175c - - - 1.60 1.80 1.90 2.10 - - v diode forward voltage v f v ge =0v, i f =9.0a t vj =25c t vj =125c t vj =175c - - - 1.45 1.40 1.40 1.80 - - v gate-emitter threshold voltage v ge(th) i c =0.08ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - - 40.0 4000.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =8.0a - 17.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 500 - output capacitance c oes - 16 - reverse transfer capacitance c res - 3 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =8.0a, v ge =15v - 22.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 10 - ns rise time t r - 5 - ns turn-off delay time t d(off) - 116 - ns fall time t f - 20 - ns turn-on energy e on - 0.07 - mj turn-off energy e off - 0.02 - mj total switching energy e ts - 0.09 - mj t vj =25c, v cc =400v, i c =4.0a, v ge =0.0/15.0v, r g =48.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e c
6 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 turn-on delay time t d(on) - 9 - ns rise time t r - 3 - ns turn-off delay time t d(off) - 129 - ns fall time t f - 35 - ns turn-on energy e on - 0.04 - mj turn-off energy e off - 0.02 - mj total switching energy e ts - 0.06 - mj t vj =25c, v cc =400v, i c =2.0a, v ge =0.0/15.0v, r g =48.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 41 - ns diode reverse recovery charge q rr - 0.14 - c diode peak reverse recovery current i rrm - 6.6 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -160 - a/s t vj =25c, v r =400v, i f =4.0a, di f /dt =800a/s diode reverse recovery time t rr - 27 - ns diode reverse recovery charge q rr - 0.10 - c diode peak reverse recovery current i rrm - 6.2 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -300 - a/s t vj =25c, v r =400v, i f =2.0a, di f /dt =800a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 9 - ns rise time t r - 6 - ns turn-off delay time t d(off) - 145 - ns fall time t f - 18 - ns turn-on energy e on - 0.10 - mj turn-off energy e off - 0.03 - mj total switching energy e ts - 0.13 - mj t vj =150c, v cc =400v, i c =4.0a, v ge =0.0/15.0v, r g =48.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time t d(on) - 9 - ns rise time t r - 4 - ns turn-off delay time t d(off) - 165 - ns fall time t f - 25 - ns turn-on energy e on - 0.06 - mj turn-off energy e off - 0.02 - mj total switching energy e ts - 0.08 - mj t vj =150c, v cc =400v, i c =2.0a, v ge =0.0/15.0v, r g =48.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e c
7 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 diodecharacteristic,at t vj =150c diode reverse recovery time t rr - 56 - ns diode reverse recovery charge q rr - 0.27 - c diode peak reverse recovery current i rrm - 7.5 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -134 - a/s t vj =150c, v r =400v, i f =4.0a, di f /dt =800a/s diode reverse recovery time t rr - 42 - ns diode reverse recovery charge q rr - 0.19 - c diode peak reverse recovery current i rrm - 7.4 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -240 - a/s t vj =150c, v r =400v, i f =2.0a, di f /dt =800a/s g c e g c e c
8 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c; v ge =15v. recommendeduseat v ge 3 7.5v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 t p =1s 10s 50s 100s 200s 500s dc figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 3 6 9 12 15 18 21 24 v ge =20v 18v 12v 10v 8v 7v 6v 5v g c e g c e c
9 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 figure 5. typicaloutputcharacteristic ( t vj =150c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 3 6 9 12 15 18 21 24 v ge =20v 18v 12v 10v 8v 7v 6v 5v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 5 6 7 8 9 0 3 6 9 12 15 18 21 24 t j =25c t j =150c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 0.75 1.00 1.25 1.50 1.75 2.00 i c =2a i c =4a i c =8a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, r g =48 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 3 6 9 12 15 18 21 24 1 10 100 t d(off) t f t d(on) t r g c e g c e c
10 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 figure 9. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, i c =4a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 5 15 25 35 45 55 65 75 85 1 10 100 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =4a, r g =48 w ,dynamictestcircuitinfigure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.08ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, r g =48 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 3 6 9 12 15 18 21 24 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 e off e on e ts g c e g c e c
11 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 figure 13. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, i c =4a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 5 15 25 35 45 55 65 75 85 0.000 0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.200 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =4a, r g =48 w ,dynamictestcircuitinfigure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.000 0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.200 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =15/0v, i c =4a, r g =48 w ,dynamictestcircuitinfigure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.000 0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.200 e off e on e ts figure 16. typicalgatecharge ( i c =8a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0.0 5.0 10.0 15.0 20.0 25.0 0 2 4 6 8 10 12 14 16 130v 520v g c e g c e c
12 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 1 10 100 1000 c iss c oss c rss figure 18. igbttransientthermalresistance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.3389743 2.2e-5 2 0.8017237 3.2e-4 3 0.7055106 3.0e-3 4 0.3537915 0.02235159 figure 19. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.4457406 1.9e-5 2 0.911159 2.4e-4 3 0.9864113 2.3e-3 4 0.5566891 0.02112308 figure 20. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 20 25 30 35 40 45 50 55 60 65 70 t j =25c, i f = 4a t j =150c, i f = 4a g c e g c e c
13 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 figure 21. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 0.10 0.15 0.20 0.25 0.30 0.35 t j =25c, i f = 4a t j =150c, i f = 4a figure 22. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 4 5 6 7 8 9 10 11 12 13 14 t j =25c, i f = 4a t j =150c, i f = 4a figure 23. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 -400 -350 -300 -250 -200 -150 -100 -50 0 t j =25c, i f = 4a t j =150c, i f = 4a figure 24. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15 18 21 24 27 t j =25c t j =150c g c e g c e c
14 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 figure 25. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i f =4,5a i f =9a i f =18a g c e g c e c
15 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 g c e g c e c PG-TO220-3
16 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 g c e g c e c PG-TO220-3 t a a b b
17 ikp08n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 revisionhistory ikp08n65f5 revision:2012-11-09,rev.1.1 previous revision revision date subjects (major changes since last revision) 1.1 2012-11-09 preliminary data sheet welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2013infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. g c e g c e c PG-TO220-3 t a a b b

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